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NVG800A75L4DSC
IGBT Module, Dual [Half Bridge], 550 A, 1.55 V, 175 °C, Module
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoNVG800A75L4DSC
Order Code3617516
Technical Datasheet
IGBT ConfigurationDual [Half Bridge]
Continuous Collector Current550A
Collector Emitter Saturation Voltage1.55V
Power Dissipation-
Operating Temperature Max175°C
Transistor Case StyleModule
IGBT TerminationSolder
Collector Emitter Voltage Max750V
IGBT TechnologyIGBT [Field Stop]
Transistor MountingPanel
Product Range-
SVHCNo SVHC (17-Jan-2023)
Technical Specifications
IGBT Configuration
Dual [Half Bridge]
Collector Emitter Saturation Voltage
1.55V
Operating Temperature Max
175°C
IGBT Termination
Solder
IGBT Technology
IGBT [Field Stop]
Product Range
-
Continuous Collector Current
550A
Power Dissipation
-
Transistor Case Style
Module
Collector Emitter Voltage Max
750V
Transistor Mounting
Panel
SVHC
No SVHC (17-Jan-2023)
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.1
Product traceability