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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQP9N90C
Order Code1095077
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds900V
Continuous Drain Current Id8A
Drain Source On State Resistance1.12ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation205W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
Product Overview
The FQP9N90C is a N-channel QFET® enhancement-mode power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
- Low gate charge (45nC)
- Low Crss (14pF)
- 100% avalanche tested
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
8A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
205W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Drain Source Voltage Vds
900V
Drain Source On State Resistance
1.12ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002033
Product traceability