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FGB20N60SFD
IGBT, 40 A, 2.2 V, 208 W, 600 V, TO-263AB (D2PAK), 3 Pins
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoFGB20N60SFD
Order Code3615744
Technical Datasheet
Continuous Collector Current40A
Collector Emitter Saturation Voltage2.2V
Power Dissipation208W
Collector Emitter Voltage Max600V
Transistor Case StyleTO-263AB (D2PAK)
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingSurface Mount
Product Range-
Technical Specifications
Continuous Collector Current
40A
Power Dissipation
208W
Transistor Case Style
TO-263AB (D2PAK)
Operating Temperature Max
150°C
Product Range
-
Collector Emitter Saturation Voltage
2.2V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Surface Mount
SVHC
No SVHC (15-Jan-2018)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:No
RoHS Phthalates Compliant:No
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.1