FFSP2065B

FFSP2065B is a silicon carbide (SiC) schottky diode. It uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets silicon carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Applications include general purpose, SMPS, solar inverter, UPS, power switching circuit.

• 94mJ single pulse avalanche energy
• High surge current capacity, positive temperature coefficient
• Ease of paralleling, no reverse recovery / no forward recovery
• 1.38V typical forward voltage (IF = 20A, TC = 25°C)
• 0.5µA typical reverse current (VR = 650V, TC = 25°C)
• 51nC typical total capacitive charge (V = 400V, TC = 25°C)
• 866pF typ total capacitance (TC = 25°C), 150W power dissipation (TC = 25°C)
• 84A non repetitive forward surge current (half sine pulse, tp = 8.3ms)
• 1.0°C/W maximum thermal resistance, junction to case
• TO−220−2LD package, operating and storage temperature range from -55 to +175°C

Warnings

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.