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FDMD86100
Dual MOSFET, N Channel, 100 V, 39 A, 10.5 mohm
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDMD86100
Order Code3616878
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel100V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel39A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel10.5mohm
Drain Source On State Resistance P Channel-
Transistor Case StylePQFN
No. of Pins8Pins
Power Dissipation N Channel33W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
100V
Continuous Drain Current Id N Channel
39A
Drain Source On State Resistance N Channel
10.5mohm
Transistor Case Style
PQFN
Power Dissipation N Channel
33W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (15-Jan-2018)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.1