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FDI045N10A-F102
Power MOSFET, N Channel, 100 V, 164 A, 0.0038 ohm, I2PAK, Through Hole
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Available to Order
Manufacturer Standard Lead Time: 19 week(s)
| Quantity | Price (ex VAT) |
|---|---|
| 1000+ | €2.190 |
Price for:Tube of 1
Minimum: 1000
Multiple: 1000
€2,190.00 (ex VAT)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDI045N10A-F102
Order Code3616050
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id164A
Drain Source On State Resistance0.0038ohm
Transistor Case StyleI2PAK
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation263W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
164A
Transistor Case Style
I2PAK
Rds(on) Test Voltage
10V
Power Dissipation
263W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0038ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.1
Product traceability