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Quantity | Price (ex VAT) |
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1+ | €0.678 |
10+ | €0.375 |
25+ | €0.338 |
50+ | €0.300 |
100+ | €0.263 |
500+ | €0.258 |
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Product Overview
The 4N35S-M is a 6-pin general purpose Phototransistor Optocoupler consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor. It is suitable for digital logic inputs and microprocessor inputs.
- 850V Maximum working insulation voltage
- 6000V Highest allowable over-voltage
- -40 to +100°C Operating temperature range
Applications
Power Management, Industrial
Technical Specifications
No. of Channels
1 Channel
No. of Pins
6Pins
Isolation Voltage
7.5kV
Collector Emitter Voltage V(br)ceo
30V
SVHC
No SVHC (19-Jan-2021)
Optocoupler Case Style
Surface Mount DIP
Forward Current If Max
60mA
CTR Min
100%
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85414900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (19-Jan-2021)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001123
Product traceability