Print Page
SI2304DS,215
Power MOSFET, N Channel, 30 V, 500 mA, 0.117 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoSI2304DS,215
Order Code1758125
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id500mA
Drain Source On State Resistance0.117ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation830mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for SI2304DS,215
1 Product Found
Product Overview
The SI2304DS,215 is a N-channel enhancement-mode FET in a plastic package using TrenchMOS™1 technology. It is suitable for use in battery management, high speed switches and low power DC to DC converter applications.
- Very fast switching
- Subminiature surface-mount package
- -65 to 150°C Junction temperature range
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
500mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
830mW
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.117ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000006