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PMT21EN
Power MOSFET, N Channel, 30 V, 7.4 A, 0.018 ohm, SOT-223, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPMT21EN
Order Code2069567
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id7.4A
Drain Source On State Resistance0.018ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Power Dissipation820mW
No. of Pins4Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The PMT21EN is a N-channel enhancement mode Field-Effect Transistor (FET) in surface-mount plastic package using Trench MOSFET technology. Suitable for high-speed line driver, low-side loadswitch and switching circuits.
- Logic-level compatible
- Very fast switching
Applications
Automotive, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
7.4A
Transistor Case Style
SOT-223
Rds(on) Test Voltage
10V
Power Dissipation
820mW
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.018ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.5V
No. of Pins
4Pins
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000242