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No Longer Manufactured
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPMGD175XN
Order Code2311193
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel1A
Continuous Drain Current Id P Channel1A
Drain Source On State Resistance N Channel0.17ohm
Drain Source On State Resistance P Channel0.17ohm
Transistor Case StyleSOT-363
No. of Pins6Pins
Power Dissipation N Channel390mW
Power Dissipation P Channel390mW
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The PMGD175XN is a dual N-channel enhancement-mode MOSFET in a very small surface-mount plastic package using Trench MOSFET technology. It is suitable for relay driver, high-speed line driver, low-side load-switch and switching circuit applications.
- Very fast switching characteristics
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
1A
Drain Source On State Resistance P Channel
0.17ohm
No. of Pins
6Pins
Power Dissipation P Channel
390mW
Product Range
-
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
1A
Drain Source On State Resistance N Channel
0.17ohm
Transistor Case Style
SOT-363
Power Dissipation N Channel
390mW
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000006