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3000+ | €0.0516 |
9000+ | €0.0458 |
Price for:Each (Supplied on Full Reel)
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Multiple: 1
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoNX2301P,215
Order Code2439336
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id2A
Drain Source On State Resistance0.12ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max750mV
Power Dissipation400mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The NX2301P is a P-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology.
- 1.8V RDSon rated for Low Voltage Gate Drive
- Very Fast Switching
- AEC-Q101 Qualified
Applications
Audio, Signal Processing, Power Management
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
2A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
400mW
Operating Temperature Max
150°C
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.12ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
750mV
No. of Pins
3Pins
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001
Product traceability