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Manufacturer Standard Lead Time: 18 week(s)
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Quantity | Price (ex VAT) |
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1000+ | €0.302 |
3000+ | €0.272 |
Price for:Each (Supplied on Full Reel)
Minimum: 1
Multiple: 1
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoBSP220,115
Order Code2439444
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id200mA
Drain Source On State Resistance12ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.8V
Power Dissipation1.5W
No. of Pins4Pins
Operating Temperature Max150°C
Qualification-
Product Overview
The BSP220,115 is a P-channel enhancement-mode vertical D-MOS Transistor in a miniature envelope. It is intended for use in relay, high-speed and line transformer drivers.
- Low RDS (ON)
- Direct interface to C-MOS, TTL
- High-speed switching
- No secondary breakdown
Applications
Power Management, Industrial
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
200mA
Transistor Case Style
SOT-223
Rds(on) Test Voltage
10V
Power Dissipation
1.5W
Operating Temperature Max
150°C
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds
200V
Drain Source On State Resistance
12ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.8V
No. of Pins
4Pins
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001
Product traceability