BF469
Bipolar (BJT) Single Transistor, NPN, 250 V, 30 mA, 2 W, TO-126, Through Hole
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| Quantity | Price (ex VAT) |
|---|---|
| 5+ | €0.679 |
| 10+ | €0.544 |
| 100+ | €0.389 |
| 500+ | €0.271 |
| 1000+ | €0.194 |
| 5000+ | €0.170 |
Product Information
Product Overview
The BF469 is a high-frequency NPN silicon transistor designed for applications requiring high-speed switching and low noise. It is ideal for use in RF amplifiers, high-speed switching circuits, and other high-frequency applications due to its superior performance characteristics. The BF469 transistor is a versatile and high-performance component ideal for high-frequency and low-noise applications. Its excellent speed and frequency characteristics make it a valuable choice for engineers and designers working on advanced electronic circuits.
- Collector-Emitter Voltage (Vceo): 50V
- Collector-Base Voltage (Vcbo): 50V
- Emitter-Base Voltage (Vebo): 5V
- Collector Current (Ic): 1A
- Base Current (Ib): 0.5A
- Power Dissipation (Pd): 1W
- DC Current Gain (hFE): 50-200 at Ic = 50mA, Vce = 10V
- Transition Frequency (ft): 1.5 GHz (typical)
- Package Type: TO-92
- Pin Configuration: 3 Pins (Collector, Base, Emitter)
- Mounting Style: Through-Hole
- Junction Temperature (Tj): -65°C to +150°C
- Thermal Resistance, Junction to Ambient (RθJA): 100°C/W
Applications
Audio, Power Supplies, DC/DC Converters, Motor Drive & Control, Signal Processing
Technical Specifications
NPN
30mA
TO-126
3Pins
50hFE
Multicomp Pro Bipolar Transistor NPN
-
250V
2W
Through Hole
60MHz
150°C
-
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
Product Compliance Certificate