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Quantity | Price (ex VAT) |
---|---|
1+ | €14.520 |
5+ | €13.000 |
10+ | €11.470 |
50+ | €11.060 |
100+ | €10.640 |
250+ | €10.430 |
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€14.52 (ex VAT)
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXFK520N075T2
Order Code3930112
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds75V
Continuous Drain Current Id520A
Drain Source On State Resistance0.0022ohm
Transistor Case StyleTO-264
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation1.25kW
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCTo Be Advised
Product Overview
N-channel enhancement mode avalanche rated fast intrinsic diode. It Is suitable for use in DC-DC converters and Off-line UPS, primary-side switch, high speed power switching applications.
- TrenchT2™ GigaMOS™ HiperFET™ power MOSFET
- High current handling capability
- Low RDS(on)
- Easy to mount
- Space savings
- High power density
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
520A
Transistor Case Style
TO-264
Rds(on) Test Voltage
10V
Power Dissipation
1.25kW
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
75V
Drain Source On State Resistance
0.0022ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
SVHC
To Be Advised
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001
Product traceability