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225 In Stock
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Quantity | Price (ex VAT) |
---|---|
1+ | €3.090 |
10+ | €1.560 |
100+ | €1.410 |
500+ | €1.310 |
1000+ | €1.200 |
Price for:Each
Minimum: 1
Multiple: 1
€3.09 (ex VAT)
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Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXTP08N100D2
Order Code3438415
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds1kV
Continuous Drain Current Id800mA
Drain Source On State Resistance21ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage0V
Gate Source Threshold Voltage Max4V
Power Dissipation60W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (12-Jan-2017)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
800mA
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
0V
Power Dissipation
60W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
1kV
Drain Source On State Resistance
21ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
SVHC
No SVHC (12-Jan-2017)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (12-Jan-2017)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.004
Product traceability