Print Page
IXFN80N60P3
MOSFET Transistor, N Channel, 66 A, 600 V, 0.077 ohm, 10 V, 5 V
Image is for illustrative purposes only. Please refer to product description.
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN80N60P3
Order Code2782974
Product RangePolar3 HiperFET
Technical Datasheet
No Longer Stocked
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN80N60P3
Order Code2782974
Product RangePolar3 HiperFET
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id66A
Drain Source Voltage Vds600V
Drain Source On State Resistance0.077ohm
Transistor Case StyleSOT-227B
Rds(on) Test Voltage10V
Transistor MountingModule
Gate Source Threshold Voltage Max5V
Power Dissipation960W
Operating Temperature Max150°C
No. of Pins4Pins
Product RangePolar3 HiperFET
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
600V
Transistor Case Style
SOT-227B
Transistor Mounting
Module
Power Dissipation
960W
No. of Pins
4Pins
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
66A
Drain Source On State Resistance
0.077ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
5V
Operating Temperature Max
150°C
Product Range
Polar3 HiperFET
SVHC
No SVHC (12-Jan-2017)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (12-Jan-2017)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.03