IRLR2908TRPBF
Power MOSFET, N Channel, 80 V, 30 A, 0.028 ohm, TO-252AA, Surface Mount
2,000 more incoming. You can reserve stock now
| Quantity | Price (ex VAT) |
|---|---|
| 5+ | €1.520 |
| 50+ | €1.020 |
| 100+ | €0.725 |
| 500+ | €0.617 |
| 1000+ | €0.569 |
Product Information
Product Overview
The IRLR2908TRPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this HEXFET® power MOSFET is a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.
- Advanced process technology
- Ultra-low ON-resistance
- Dynamic dV/dt rating
- Repetitive avalanche allowed up to Tjmax
- Logic level
Applications
Power Management
Technical Specifications
N Channel
30A
TO-252AA
10V
120W
175°C
-
No SVHC (21-Jan-2025)
80V
0.028ohm
Surface Mount
2.5V
3Pins
-
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate