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IRG7PH42UD1PBF
IGBT, 85 A, 1.7 V, 313 W, 1.2 kV, TO-247AC, 3 Pins
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRG7PH42UD1PBF
Order Code1857372
Technical Datasheet
Continuous Collector Current85A
Collector Emitter Saturation Voltage1.7V
Power Dissipation313W
Collector Emitter Voltage Max1.2kV
Transistor Case StyleTO-247AC
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product Range-
Product Overview
The IRG7PH42UD1PBF is an Insulated Gate Bipolar Transistor with ultra-low VF diode for induction heating and soft switching applications. It features rugged transient performance for increased reliability and excellent current sharing in parallel operation.
- Low VCE (ON) Trench IGBT technology
- Low switching losses
- Square RBSOA
- Ultra-low VF diode
- 100% of Parts tested for ILM
- Positive VCE (ON) temperature coefficient
- Tight parameter distribution
- Low EMI
- 1300Vpk Repetitive transient capacity
Applications
Power Management, HVAC
Technical Specifications
Continuous Collector Current
85A
Power Dissipation
313W
Transistor Case Style
TO-247AC
Operating Temperature Max
150°C
Product Range
-
Collector Emitter Saturation Voltage
1.7V
Collector Emitter Voltage Max
1.2kV
No. of Pins
3Pins
Transistor Mounting
Through Hole
Technical Docs (1)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.006