Print Page
IGT65R140D2XTMA1
Gallium Nitride (GaN) Transistor, 650 V, 13 A, 0.17 ohm, 1.8 nC, HSOF, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Notify me when back in stock
| Quantity | Price (ex VAT) |
|---|---|
| 100+ | €2.280 |
| 500+ | €1.910 |
| 1000+ | €1.630 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
€233.00 (ex VAT)
A €5.00 re-reeling charge will be added for this product
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIGT65R140D2XTMA1
Order Code4640396RL
Technical Datasheet
Drain Source Voltage Vds650V
Continuous Drain Current Id13A
Drain Source On State Resistance0.17ohm
Typical Gate Charge1.8nC
No. of Pins8Pins
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.17ohm
No. of Pins
8Pins
Continuous Drain Current Id
13A
Typical Gate Charge
1.8nC
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001
Product traceability