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IGT65R055D2XTMA1
Gallium Nitride (GaN) Transistor, 650 V, 31 A, 0.066 ohm, 4.7 nC, HSOF, Surface Mount
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| Quantity | Price (ex VAT) |
|---|---|
| 10+ | €6.680 |
| 100+ | €5.830 |
| 500+ | €5.250 |
| 1000+ | €4.870 |
Price for:Each (Supplied on Cut Tape)
Minimum: 10
Multiple: 1
€71.80 (ex VAT)
A €5.00 re-reeling charge will be added for this product
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIGT65R055D2XTMA1
Order Code4640395RL
Technical Datasheet
Drain Source Voltage Vds650V
Continuous Drain Current Id31A
Drain Source On State Resistance0.066ohm
Typical Gate Charge4.7nC
No. of Pins8Pins
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.066ohm
No. of Pins
8Pins
Continuous Drain Current Id
31A
Typical Gate Charge
4.7nC
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001
Product traceability