Print Page
DMG2301L-7
Power MOSFET, P Channel, 20 V, 3 A, 0.12 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
8,274 In Stock
12,000 more incoming. You can reserve stock now
1-2 Working Days Delivery
Order before 17:00 standard shipping
| Quantity | Price (ex VAT) |
|---|---|
| 5+ | €0.248 |
| 50+ | €0.153 |
| 100+ | €0.0624 |
| 500+ | €0.0612 |
| 1500+ | €0.0599 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
€1.24 (ex VAT)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMG2301L-7
Order Code3127313
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id3A
Drain Source On State Resistance0.12ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1.2V
Power Dissipation1.5W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
Product Overview
DMG2301L-7 is a P-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications include backlighting, power management functions, DC-DC converters, and motor control.
- Low on-resistance, low input capacitance
- Fast switching speed
- Drain-source voltage is -20V at TA=+25°C
- Gate-source voltage is ±8V at TA=+25°C
- Continuous drain current is -3A at TA=+25°C, steady state, VGS=-4.5V
- Pulsed drain current is -10A at TA=+25°C
- Drain-source diode forward current ( t < 5 sec) is -0.75A at TA=+25°C
- Power dissipation is 1.5W
- SOT23 (standard) case
- Operating and storage temperature range from -55 to +150°C
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
3A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
1.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.12ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.2V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000145
Product traceability