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S29GL01GT10TFI020
Flash Memory, MirrorBit Eclipse Architecture, Parallel NOR, 1 Gbit, 128M x 8bit, CFI, Parallel
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ManufacturerINFINEON
Manufacturer Part NoS29GL01GT10TFI020
Order Code2768057
Product Range3V Parallel NOR Flash Memories
Also Known AsSP005664121, S29GL01GT10TFI020
Technical Datasheet
499 In Stock
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | €13.840 |
| 10+ | €12.840 |
| 25+ | €12.180 |
| 50+ | €10.430 |
| 100+ | €10.420 |
Price for:Each
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Multiple: 1
€13.84 (ex VAT)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoS29GL01GT10TFI020
Order Code2768057
Product Range3V Parallel NOR Flash Memories
Also Known AsSP005664121, S29GL01GT10TFI020
Technical Datasheet
Flash Memory TypeParallel NOR
Memory Density1Gbit
Memory Configuration128M x 8bit
InterfacesCFI, Parallel
IC Case / PackageTSOP
No. of Pins56Pins
Clock Frequency Max-
Access Time100ns
Supply Voltage Min2.7V
Supply Voltage Max3.6V
Supply Voltage Nom-
IC MountingSurface Mount
Operating Temperature Min-40°C
Operating Temperature Max85°C
Product Range3V Parallel NOR Flash Memories
MSLMSL 3 - 168 hours
SVHCNo SVHC (21-Jan-2025)
Product Overview
S29GL01GT10TFI020 is a MIRRORBIT™ flash product fabricated on 45nm process technology. This device offers a fast page access time as fast as 15ns, with a corresponding random access time as fast as 100ns. It features a write buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes the device ideal for today’s embedded applications that require higher density, better performance, and lower power consumption.
- 100ns random access time, single supply (VCC) for read/program/erase (2.7V to 3.6V)
- 45-nm MIRRORBIT™ technology, wide I/O voltage range (VIO) from 1.65V to VCC
- ×8/×16 data bus, asynchronous 32-byte page read
- Single word and multiple program on same word options
- Automatic error checking and correction (ECC)-internal hardware ECC with single bit error correction
- Suspend and resume commands for program and erase operations
- Volatile and non-volatile protection methods for each sector
- Separate 2048-byte one-time program (OTP) array
- 100,000 program/erase cycles, 20-year data retention
- Industrial temperature range from -40°C to +85°C, 56-pin TSOP package
Technical Specifications
Flash Memory Type
Parallel NOR
Memory Configuration
128M x 8bit
IC Case / Package
TSOP
Clock Frequency Max
-
Supply Voltage Min
2.7V
Supply Voltage Nom
-
Operating Temperature Min
-40°C
Product Range
3V Parallel NOR Flash Memories
SVHC
No SVHC (21-Jan-2025)
Memory Density
1Gbit
Interfaces
CFI, Parallel
No. of Pins
56Pins
Access Time
100ns
Supply Voltage Max
3.6V
IC Mounting
Surface Mount
Operating Temperature Max
85°C
MSL
MSL 3 - 168 hours
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Tariff No:85423269
US ECCN:3A991.b.1.a
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.051709
Product traceability