227W Single IGBTs | Farnell Italy

Find a huge range of 227W Single IGBTs at Farnell Italy. We stock a wide range of Single IGBTs, such as 250W, 150W, 375W & 125W Single IGBTs from the worlds top manufacturers including: Rohm, Infineon & Stmicroelectronics

Filter(s) Applied

Power Dissipation

:

227W

1 Filter(s) Selected

Compare					Price For		Quantity

	IKW30N65EL5XKSA1	2709886 Data Sheet RoHS Date/Lot Code	INFINEON IGBT 85 A 1.05 V 227 W 650 V TO-247 3 Pins		Each	1+ €4.290 10+ €2.460 100+ €2.230 500+ €2.000 1000+ €1.770	Min: 1 / Mult: 1	85A	1.05V	227W	650V	TO-247	3Pins	175°C	Through Hole	TRENCHSTOP 5
	IGW30N65L5XKSA1	2709992 Data Sheet RoHS Date/Lot Code	INFINEON IGBT 85 A 1.05 V 227 W 650 V TO-247 3 Pins		Each	1+ €3.650 10+ €2.010 100+ €1.640 500+ €1.600 1000+ €1.570	Min: 1 / Mult: 1	85A	1.05V	227W	650V	TO-247	3Pins	175°C	Through Hole	TRENCHSTOP 5
	STGWA40HP65FB2	2987008 Data Sheet RoHS	STMICROELECTRONICS IGBT 72 A 1.55 V 227 W 650 V TO-247 3 Pins		Each	1+ €3.260 10+ €2.390 100+ €1.960 500+ €1.950 1000+ €1.940	Min: 1 / Mult: 1	72A	1.55V	227W	650V	TO-247	3Pins	175°C	Through Hole	HB2
	RGW80NL65DHRBTL	4308142 Data Sheet RoHS Date/Lot Code	ROHM IGBT AEC-Q101 83 A 1.5 V 227 W 650 V TO-263L 3 Pins		Each (Supplied on Cut Tape) Cut Tape	1+ €5.690 10+ €3.960 100+ €2.860 500+ €2.840 1000+ €2.310	Min: 1 / Mult: 1	83A	1.5V	227W	650V	TO-263L	3Pins	175°C	Surface Mount	Field Stop Trench Series
	RGW80NL65HRBTL	4308140 Data Sheet RoHS Date/Lot Code	ROHM IGBT AEC-Q101 83 A 1.5 V 227 W 650 V TO-263L 3 Pins		Each (Supplied on Cut Tape) Cut Tape	1+ €5.030 10+ €3.360 100+ €2.400 500+ €2.310 1000+ €2.080	Min: 1 / Mult: 1	83A	1.5V	227W	650V	TO-263L	3Pins	175°C	Surface Mount	Field Stop Trench Series
	RGW80NL65HRBTL	4308140RL Data Sheet RoHS Date/Lot Code	ROHM IGBT AEC-Q101 83 A 1.5 V 227 W 650 V TO-263L 3 Pins		Each (Supplied on Cut Tape) Re-Reel Packaging Options	100+ €2.400 500+ €2.310 1000+ €2.080	Min: 100 / Mult: 1	83A	1.5V	227W	650V	TO-263L	3Pins	175°C	Surface Mount	Field Stop Trench Series
	RGW80NL65DHRBTL	4308142RL Data Sheet RoHS Date/Lot Code	ROHM IGBT AEC-Q101 83 A 1.5 V 227 W 650 V TO-263L 3 Pins		Each (Supplied on Cut Tape) Cut Tape	100+ €2.860 500+ €2.840 1000+ €2.310	Min: 100 / Mult: 1	83A	1.5V	227W	650V	TO-263L	3Pins	175°C	Surface Mount	Field Stop Trench Series

Items per page:

1-7 of 7 items

of 1 page(s)

Popular Suppliers

ONSEMI

NEXPERIA

VISHAY

STMICROELECTRONICS

MULTICOMP PRO

INFINEON

NXP

ROHM

New Semiconductors - Discretes

Bipolar Pre-Biased / Digital Transistor

Bipolar Pre-Biased / Digital Transistor

ONSEMI

Trench Gate, -50V to -200V P-Channel Power MOSFETs

Trench Gate, -50V to -200V P-Channel Power MOSFETs

LITTELFUSE

TP65H035G4YS - gallium nitride (GaN) FET

TP65H035G4YS - gallium nitride (GaN) FET

RENESAS

G3R60MT07K – Silicon Carbide MOSFET

GENESIC SEMICONDUCTOR

G3R60MT07K – Silicon Carbide MOSFET

GENESIC SEMICONDUCTOR

TK024N60Z1,S1F(S - Power MOSFET

TK024N60Z1,S1F(S - Power MOSFET

TOSHIBA

ONSEMI

CoolSiC™ Trench MOSFET

CoolSiC™ Trench MOSFET

INFINEON

EconoDUAL™ 3 product family for medium power applications

EconoDUAL™ 3 product family for medium power applications

INFINEON

TK024N60Z1,S1F(S - Power MOSFET

TK024N60Z1,S1F(S - Power MOSFET

TOSHIBA

Nexperia E-Mode Power Gallium Nitride FET's (GaN FET's) for high & low voltage applications.

Nexperia E-Mode Power Gallium Nitride FET's (GaN FET's) for high & low voltage applications.

NEXPERIA

New onsemi 650v SiC MOSFETs

New onsemi 650v SiC MOSFETs

ONSEMI

semi-disc-np1-nov-analog-devices-matched-bjt-arrays

semi-disc-np1-nov-analog-devices-matched-bjt-arrays

ANALOG DEVICES

New Toshiba SiC Schottky Barrier Diodes

New Toshiba SiC Schottky Barrier Diodes

TOSHIBA

XPT series IGBT Thin-wafer Technology for snubber-less hard-switching applications

XPT series IGBT Thin-wafer Technology for snubber-less hard-switching applications

LITTELFUSE

MPS Series SiC Schottky Diodes - 650V to 1.7KV

GENESIC SEMICONDUCTOR

MPS Series SiC Schottky Diodes - 650V to 1.7KV

GENESIC SEMICONDUCTOR