Reduced PricesOffersContact UsHelpTrack Ordersin italiano
Register
0
0 Items€0.00
ex VAT
ex VAT

Single MOSFETs:

12 Products Found
View
Buyer
Engineer
Manufacturer
Channel Type
Drain Source Voltage Vds
Continuous Drain Current Id
Drain Source On State Resistance
Transistor Case Style
Transistor Mounting
Rds(on) Test Voltage
Gate Source Threshold Voltage Max
Power Dissipation
No. of Pins
Operating Temperature Max
Product Range
Packaging
Filter(s) Applied
1 Filter(s) Selected
ComparePrice ForQuantity
IRF8010PBF
INFINEON IRF8010PBF
8657823

Data Sheet

RoHS

Date/Lot Code

INFINEON
  1. Power MOSFET
  2. N Channel
  3. 100 V
  4. 80 A
  5. 0.015 ohm
  6. TO-220AB
  7. Through Hole
Each
1+
€1.280
10+
€0.978
100+
€0.919
500+
€0.878
1000+
€0.868
More Pricing...
Min: 1 / Mult: 1
N Channel
100V
80A
0.015ohm
TO-220AB
Through Hole
10V
4V
260W
3Pins
175°C
-
FDB2614
ONSEMI FDB2614
1495274

Data Sheet

RoHS

Date/Lot Code

ONSEMI
  1. Power MOSFET
  2. N Channel
  3. 200 V
  4. 62 A
  5. 0.027 ohm
  6. TO-263 (D2PAK)
  7. Surface Mount
Each (Supplied on Cut Tape)
Cut Tape
1+
€4.760
10+
€3.390
100+
€2.540
500+
€2.300
1000+
€2.250
Min: 1 / Mult: 1
N Channel
200V
62A
0.027ohm
TO-263 (D2PAK)
Surface Mount
10V
4V
260W
2Pins
150°C
-
FDB2710
ONSEMI FDB2710
2453390

Data Sheet

RoHS

Date/Lot Code

ONSEMI
  1. Power MOSFET
  2. N Channel
  3. 250 V
  4. 50 A
  5. 0.0425 ohm
  6. TO-263AB
  7. Surface Mount
Each (Supplied on Cut Tape)
Cut Tape
1+
€5.310
10+
€3.600
100+
€2.590
500+
€2.380
1000+
€2.170
Min: 1 / Mult: 1
N Channel
250V
50A
0.0425ohm
TO-263AB
Surface Mount
10V
4V
260W
2Pins
150°C
-
FDP2710
ONSEMI FDP2710
3368764

Data Sheet

RoHS

Date/Lot Code

ONSEMI
  1. Power MOSFET
  2. N Channel
  3. 250 V
  4. 50 A
  5. 0.0363 ohm
  6. TO-220
  7. Through Hole
Each
1+
€4.300
10+
€3.790
100+
€2.360
500+
€2.110
1000+
€2.070
Min: 1 / Mult: 1
N Channel
250V
50A
0.0363ohm
TO-220
Through Hole
10V
4V
260W
3Pins
150°C
PowerTrench
NTMT064N65S3H
ONSEMI NTMT064N65S3H
3367859RL

Data Sheet

RoHS

Date/Lot Code

ONSEMI
  1. Power MOSFET
  2. N Channel
  3. 650 V
  4. 40 A
  5. 0.052 ohm
  6. TDFN
  7. Surface Mount
Each (Supplied on Cut Tape)
Re-Reel
Packaging Options
10+
€6.300
50+
€5.800
100+
€5.320
250+
€5.310
Min: 10 / Mult: 1
N Channel
650V
40A
0.052ohm
TDFN
Surface Mount
10V
4V
260W
4Pins
150°C
SUPERFET III
NTMT064N65S3H
ONSEMI NTMT064N65S3H
3367859

Data Sheet

RoHS

Date/Lot Code

ONSEMI
  1. Power MOSFET
  2. N Channel
  3. 650 V
  4. 40 A
  5. 0.052 ohm
  6. TDFN
  7. Surface Mount
Each (Supplied on Cut Tape)
Cut Tape
1+
€8.440
5+
€7.370
10+
€6.300
50+
€5.800
100+
€5.320
More Pricing...
Min: 1 / Mult: 1
N Channel
650V
40A
0.052ohm
TDFN
Surface Mount
10V
4V
260W
4Pins
150°C
SUPERFET III
FDB2710
ONSEMI FDB2710
2453390RL

Data Sheet

RoHS

Date/Lot Code

ONSEMI
  1. Power MOSFET
  2. N Channel
  3. 250 V
  4. 50 A
  5. 0.0425 ohm
  6. TO-263AB
  7. Surface Mount
Each (Supplied on Cut Tape)
Re-Reel
Packaging Options
100+
€2.590
500+
€2.380
1000+
€2.170
Min: 100 / Mult: 5
N Channel
250V
50A
0.0425ohm
TO-263AB
Surface Mount
10V
4V
260W
2Pins
150°C
-
FDB2614
ONSEMI FDB2614
1495274RL

Data Sheet

RoHS

Date/Lot Code

ONSEMI
  1. Power MOSFET
  2. N Channel
  3. 200 V
  4. 62 A
  5. 0.027 ohm
  6. TO-263 (D2PAK)
  7. Surface Mount
Each (Supplied on Cut Tape)
Re-Reel
Packaging Options
100+
€2.540
500+
€2.300
1000+
€2.250
Min: 100 / Mult: 1
N Channel
200V
62A
0.027ohm
TO-263 (D2PAK)
Surface Mount
10V
4V
260W
2Pins
150°C
-
TK40J20D,S1F(O
TOSHIBA TK40J20D,S1F(O
4227515

Data Sheet

RoHS

Date/Lot Code

TOSHIBA
  1. Power MOSFET
  2. N Channel
  3. 200 V
  4. 40 A
  5. 0.0374 ohm
  6. TO-3PN
  7. Through Hole
Each
1+
€5.480
10+
€4.250
100+
€3.570
Min: 1 / Mult: 1
N Channel
200V
40A
0.0374ohm
TO-3PN
Through Hole
10V
3.5V
260W
3Pins
150°C
-
MCB200N06YB-TP
MICRO COMMERCIAL COMPONENTS MCB200N06YB-TP
4707875

Data Sheet

RoHS

MICRO COMMERCIAL COMPONENTS
  1. Power MOSFET
  2. N Channel
  3. 60 V
  4. 200 A
  5. 0.0029 ohm
  6. TO-263 (D2PAK)
  7. Surface Mount
Each (Supplied on Cut Tape)
Cut Tape
1+
€2.750
10+
€2.250
100+
€1.820
500+
€1.580
1000+
€1.450
Min: 1 / Mult: 1
N Channel
60V
200A
0.0029ohm
TO-263 (D2PAK)
Surface Mount
10V
2.2V
260W
3Pins
150°C
-
FDP2614
ONSEMI FDP2614
2322600

Data Sheet

RoHS

Date/Lot Code

ONSEMI
  1. Power MOSFET
  2. N Channel
  3. 200 V
  4. 62 A
  5. 0.0229 ohm
  6. TO-220
  7. Through Hole
Each
800+
€2.020
Min: 800 / Mult: 800
N Channel
200V
62A
0.0229ohm
TO-220
Through Hole
10V
4V
260W
3Pins
150°C
-
FCMT080N65S3
ONSEMI FCMT080N65S3
3615898

Data Sheet

RoHS

Date/Lot Code

ONSEMI
  1. Power MOSFET
  2. N Channel
  3. 650 V
  4. 38 A
  5. 0.08 ohm
  6. TDFN
  7. Surface Mount
Each (Supplied on Full Reel)
Full Reel
3000+
€2.480
Min: 3000 / Mult: 3000
N Channel
650V
38A
0.08ohm
TDFN
Surface Mount
10V
4.5V
260W
8Pins
150°C
-
1-12 of 12 items
of 1 page(s)

Popular Suppliers

ONSEMI
NEXPERIA
VISHAY
STMICROELECTRONICS
MULTICOMP PRO
INFINEON
NXP
ROHM

New Semiconductors - Discretes

TP65H035G4YS - gallium nitride (GaN) FET
RENESAS
TP65H035G4YS - gallium nitride (GaN) FET
RENESAS
G3R60MT07K – Silicon Carbide MOSFET
GENESIC SEMICONDUCTOR
G3R60MT07K – Silicon Carbide MOSFET
GENESIC SEMICONDUCTOR
TK024N60Z1,S1F(S - Power MOSFET
TOSHIBA
TK024N60Z1,S1F(S - Power MOSFET
TOSHIBA
M3S SiC Series
ONSEMI
M3S SiC Series
ONSEMI
CoolSiC™ Trench MOSFET
INFINEON
CoolSiC™ Trench MOSFET
INFINEON
EconoDUAL™ 3 product family for medium power applications
INFINEON
EconoDUAL™ 3 product family for medium power applications
INFINEON
TK024N60Z1,S1F(S - Power MOSFET
TOSHIBA
TK024N60Z1,S1F(S - Power MOSFET
TOSHIBA
Nexperia E-Mode Power Gallium Nitride FET's (GaN FET's) for high & low voltage applications.
NEXPERIA
Nexperia E-Mode Power Gallium Nitride FET's (GaN FET's) for high & low voltage applications.
NEXPERIA
New onsemi 650v SiC MOSFETs
ONSEMI
New onsemi 650v SiC MOSFETs
ONSEMI
semi-disc-np1-nov-analog-devices-matched-bjt-arrays
ANALOG DEVICES
semi-disc-np1-nov-analog-devices-matched-bjt-arrays
ANALOG DEVICES
New Toshiba SiC Schottky Barrier Diodes
TOSHIBA
New Toshiba SiC Schottky Barrier Diodes
TOSHIBA
XPT series IGBT Thin-wafer Technology for snubber-less hard-switching applications
LITTELFUSE
XPT series IGBT Thin-wafer Technology for snubber-less hard-switching applications
LITTELFUSE
MPS Series SiC Schottky Diodes - 650V to 1.7KV
GENESIC SEMICONDUCTOR
MPS Series SiC Schottky Diodes - 650V to 1.7KV
GENESIC SEMICONDUCTOR
N-Channel Power MOSFET
INFINEON
N-Channel Power MOSFET
INFINEON
600 V, 30 A Trench field-stop IGBT with full-rated Silicon Diode
NEXPERIA
600 V, 30 A Trench field-stop IGBT with full-rated Silicon Diode
NEXPERIA
Norton Secured
BSI 9001
Visa
Mastercard
AMEX
Trade Account