HMC508LP5E

HMC508LP5E is a GaAs InGaP heterojunction bipolar transistor (HBT) low noise MMIC VCOs. It integrates resonators, negative resistance devices, reactor diodes, and feature a half frequency output. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Application includes VSAT radio, point-to-point/multi-point radio, test equipment and industrial controls, military end-use.

• No external resonator needed
• Frequency range from 7.3 to 8.2GHz (Fo, TA=+25°C, Vcc=+5V)
• Power output range from +12 to +17dBm (RFOUT, TA=+25° C, Vcc=+5V)
• Typ SSB phase noise at 100KHz offset, Vtune= +5V at RFOUT is -116dBc/Hz (TA=+25°C, Vcc=+5V)
• Tune voltage range from 2 to 13V (Vtune, TA=+25°C, Vcc=+5V)
• Typical supply current (Icc) is 240mA (Vcc=+5.0V, TA=+25°C, Vcc=+5V)
• Maximum tune port leakage current (Vtune= 13V) is 10µA (Vcc=+5.0V, TA=+25°C, Vcc=+5V))
• Typical output return loss is 2dB, typical harmonics/subharmonics is 40dBc (TA=+25°C, Vcc=+5V)
• Typ pulling is 8MHz pp (into a 2.0:1 VSWR), typ frequency drift rate is 1MHz/°C (TA=+25°C, Vcc=+5V)
• 32 lead QFN surface mount package, operating temperature range from −40°C to +85°C

Notes

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