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CSD86336Q3DT
Dual MOSFET, N Channel, 25 V, 25 V
Image is for illustrative purposes only. Please refer to product description.
ManufacturerTEXAS INSTRUMENTS
Manufacturer Part NoCSD86336Q3DT
Order Code2860282RL
Product RangeNexFET Series
Product Information
ManufacturerTEXAS INSTRUMENTS
Manufacturer Part NoCSD86336Q3DT
Order Code2860282RL
Product RangeNexFET Series
Channel TypeN Channel
Drain Source Voltage Vds N Channel25V
Drain Source Voltage Vds P Channel25V
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel-
Drain Source On State Resistance P Channel-
Transistor Case StyleVSON
No. of Pins8Pins
Power Dissipation N Channel6W
Power Dissipation P Channel6W
Operating Temperature Max125°C
Product RangeNexFET Series
Qualification-
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
25V
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
6W
Product Range
NexFET Series
SVHC
No SVHC (27-Jun-2018)
Drain Source Voltage Vds N Channel
25V
Continuous Drain Current Id N Channel
-
Drain Source On State Resistance N Channel
-
Transistor Case Style
VSON
Power Dissipation N Channel
6W
Operating Temperature Max
125°C
Qualification
-
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000012
Product traceability