VISHAY Semiconductors - Discretes

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Repetitive Peak Reverse Voltage Average Forward Current Forward Voltage Max Diode Module Configuration Diode Case Style No. of Pins Operating Temperature Max Forward Surge Current Diode Mounting Product Range
 
 
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VS-40HF40
VS-40HF40 - Diode Module, 400 V, 40 A, 1.3 V, DO-5, 2 Pins

365646

Diode Module, 400 V, 40 A, 1.3 V, DO-5, 2 Pins

VISHAY

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400V 40A 1.3V - DO-5 2Pins 190°C 570A Stud VS-40
IRF740LCPBF
IRF740LCPBF - Power MOSFET, N Channel, 400 V, 10 A, 0.55 ohm, TO-220AB, Through Hole

8648476

Power MOSFET, N Channel, 400 V, 10 A, 0.55 ohm, TO-220AB, Through Hole

VISHAY

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- - - - - 3Pins 150°C - - -
BU2006-E3/45
BU2006-E3/45 - Bridge Rectifier, Single Phase, 600 V, 20 A, SIP, 4 Pins, 1.05 V

1815622

Bridge Rectifier, Single Phase, 600 V, 20 A, SIP, 4 Pins, 1.05 V

VISHAY

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600V 20A 1.05V - - 4Pins 150°C 240A - BU200
SIHU7N60E-GE3
SIHU7N60E-GE3 - Power MOSFET, N Channel, 600 V, 7 A, 0.5 ohm, TO-251, Through Hole

2283639

Power MOSFET, N Channel, 600 V, 7 A, 0.5 ohm, TO-251, Through Hole

VISHAY

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- - - - - 3Pins 150°C - - E
VS-60APU04-N3
VS-60APU04-N3 - Standard Recovery Diode, 400 V, 60 A, Single, 1.25 V, 85 ns, 600 A

2690140

Standard Recovery Diode, 400 V, 60 A, Single, 1.25 V, 85 ns, 600 A

VISHAY

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400V 60A 1.25V - TO-247AC 3Pins 175°C 600A - -
IRF9Z30PBF
IRF9Z30PBF - Power MOSFET, HEXFET, P Channel, 50 V, 18 A, 0.093 ohm, TO-220AB, Through Hole

2547298

Power MOSFET, HEXFET, P Channel, 50 V, 18 A, 0.093 ohm, TO-220AB, Through Hole

VISHAY

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- - - - - 3Pins 150°C - - -
SIZ998DT-T1-GE3
SIZ998DT-T1-GE3 - Dual MOSFET, N Channel + Schottky, 30 V, 30 V, 60 A, 60 A, 0.0022 ohm

2802799

Dual MOSFET, N Channel + Schottky, 30 V, 30 V, 60 A, 60 A, 0.0022 ohm

VISHAY

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Suggested replacement for:2802799
2802799RL in Re-Reel

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- - - - - 8Pins 150°C - - TrenchFET Series
VS-30CTQ060-1-M3
VS-30CTQ060-1-M3 - Schottky Rectifier, 60 V, 30 A, Dual Common Cathode, TO-262AA, 3 Pins, 820 mV

2901064

Schottky Rectifier, 60 V, 30 A, Dual Common Cathode, TO-262AA, 3 Pins, 820 mV

VISHAY

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60V 30A 820mV - TO-262AA 3Pins 150°C 1kA Through Hole -
SB150-E3/54
SB150-E3/54 - Schottky Rectifier, 50 V, 1 A, Single, DO-204AL, 2 Pins, 650 mV

2889212

Schottky Rectifier, 50 V, 1 A, Single, DO-204AL, 2 Pins, 650 mV

VISHAY

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50V 1A 650mV - DO-204AL 2Pins 150°C 50A Through Hole -
S07J-GS08
S07J-GS08 - Standard Recovery Diode, Switching, 600 V, 700 mA, Single, 1.1 V, 1.8 µs, 25 A

1617736

Standard Recovery Diode, Switching, 600 V, 700 mA, Single, 1.1 V, 1.8 µs, 25 A

VISHAY

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Suggested replacement for:1617736
1617736RL in Re-Reel

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600V 700mA 1.1V - DO-219AB 2Pins 150°C 25A - S07J
SIHG30N60E-GE3
SIHG30N60E-GE3 - Power MOSFET, N Channel, 600 V, 29 A, 0.104 ohm, TO-247AC, Through Hole

2364082

Power MOSFET, N Channel, 600 V, 29 A, 0.104 ohm, TO-247AC, Through Hole

VISHAY

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- - - - - 3Pins 150°C - - -
IRFU220PBF
IRFU220PBF - Power MOSFET, N Channel, 200 V, 4.8 A, 0.8 ohm, TO-251AA, Through Hole

8650039

Power MOSFET, N Channel, 200 V, 4.8 A, 0.8 ohm, TO-251AA, Through Hole

VISHAY

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- - - - - 3Pins 150°C - - -
UF5407-E3/73
UF5407-E3/73 - Fast / Ultrafast Diode, 800 V, 3 A, Single, 1.7 V, 75 ns, 150 A

9551727

Fast / Ultrafast Diode, 800 V, 3 A, Single, 1.7 V, 75 ns, 150 A

VISHAY

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800V 3A 1.7V - DO-201AD - 150°C 150A - UF540
SIS407DN-T1-GE3
SIS407DN-T1-GE3 - Power MOSFET, P Channel, 20 V, 25 A, 0.0082 ohm, PowerPAK 1212, Surface Mount

1859001

Power MOSFET, P Channel, 20 V, 25 A, 0.0082 ohm, PowerPAK 1212, Surface Mount

VISHAY

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- - - - - 8Pins 150°C - - -
IRFD220PBF
IRFD220PBF - Power MOSFET, N Channel, 200 V, 1.3 A, 0.8 ohm, DIP, Through Hole

9102388

Power MOSFET, N Channel, 200 V, 1.3 A, 0.8 ohm, DIP, Through Hole

VISHAY

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- - - - - 4Pins 150°C - - -
GBU4J-E3/51
GBU4J-E3/51 - Bridge Rectifier, Single Phase, 600 V, 4 A, SIP, 4 Pins, 1 V

9549455

Bridge Rectifier, Single Phase, 600 V, 4 A, SIP, 4 Pins, 1 V

VISHAY

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600V 4A 1V - - 4Pins 150°C 150A - GBU4J
IRFR210PBF
IRFR210PBF - Power MOSFET, N Channel, 200 V, 2.6 A, 1.5 ohm, TO-252 (DPAK), Surface Mount

8649685

Power MOSFET, N Channel, 200 V, 2.6 A, 1.5 ohm, TO-252 (DPAK), Surface Mount

VISHAY

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- - - - - 3Pins 150°C - - -
SI5908DC-T1-E3
SI5908DC-T1-E3 - Dual MOSFET, N Channel, 20 V, 20 V, 4.4 A, 4.4 A, 0.032 ohm

2335337

Dual MOSFET, N Channel, 20 V, 20 V, 4.4 A, 4.4 A, 0.032 ohm

VISHAY

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- - - - - 8Pins 150°C - - -
VB30100S-E3/8W
VB30100S-E3/8W - Schottky Rectifier, 100 V, 30 A, Single, TO-263AB, 3 Pins, 910 mV

2335180

Schottky Rectifier, 100 V, 30 A, Single, TO-263AB, 3 Pins, 910 mV

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100V 30A 910mV - TO-263AB 3Pins 150°C 250A Surface Mount Trench MOS Series
RMB4S-E3/45
RMB4S-E3/45 - Bridge Rectifier, Single Phase, 400 V, 500 mA, TO-269AA, 4 Pins, 1.25 V

1336504

Bridge Rectifier, Single Phase, 400 V, 500 mA, TO-269AA, 4 Pins, 1.25 V

VISHAY

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400V 500mA 1.25V - - 4Pins 150°C 30A - RMB4S
IRL520PBF
IRL520PBF - Power MOSFET, N Channel, 100 V, 9.2 A, 0.27 ohm, TO-220AB, Through Hole

9102744

Power MOSFET, N Channel, 100 V, 9.2 A, 0.27 ohm, TO-220AB, Through Hole

VISHAY

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- - - - - 3Pins 175°C - - -
SIHA12N60E-E3
SIHA12N60E-E3 - Power MOSFET, N Channel, 600 V, 12 A, 0.32 ohm, TO-220F, Through Hole

2422227

Power MOSFET, N Channel, 600 V, 12 A, 0.32 ohm, TO-220F, Through Hole

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- - - - - 3Pins 150°C - - -
VS-3EJH02HM3/6B
VS-3EJH02HM3/6B - Fast / Ultrafast Diode, 200 V, 3 A, Single, 930 mV, 30 ns, 85 A

2471187

Fast / Ultrafast Diode, 200 V, 3 A, Single, 930 mV, 30 ns, 85 A

VISHAY

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200V 3A 930mV - DO-221AC - 175°C 85A - FRED Pt® SlimSMA
SQD30N05-20L_GE3
SQD30N05-20L_GE3 - Power MOSFET, N Channel, 55 V, 30 A, 0.016 ohm, TO-252 (DPAK), Surface Mount

1869909

Power MOSFET, N Channel, 55 V, 30 A, 0.016 ohm, TO-252 (DPAK), Surface Mount

VISHAY

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- - - - - 3Pins 175°C - - -
SIRA14DP-T1-GE3
SIRA14DP-T1-GE3 - Power MOSFET, N Channel, 30 V, 20 A, 0.00425 ohm, PowerPAK SO, Surface Mount

2283684

Power MOSFET, N Channel, 30 V, 20 A, 0.00425 ohm, PowerPAK SO, Surface Mount

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- - - - - 8Pins 150°C - - -